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  • Cluster PVD

Cluster PVD

Proven equipment with high productivity and exceptional quality in semiconductor mass-production processes.

Supplying Standard Sputtering Systems optimized for reliable, high-volume manufacturing.

Providing Customized Sputtering Systems tailored to meet each customer’s unique process and performance requirements

  • NxT-300 Sputtering System

    • Application : Semi. Packaging, Power Device, Micro OLED, etc.
    • Platform : Dual Cluster
    • Process Material : Metal, Oxide, Nitride
    • Power : RF, DC, RF+DC, HiPIMS
    • Gas : Ar, N₂, O₂
    • Vacuum : 5x10-8 Torr
    • Suscepter : Heat & Cool
    • Substrate : 12” Wafer
    • Uniformity : ≤3%
    More +

    • EFEM

      [Description]

      • 3 FOUP Automation EFEM
      • ATM Robot
      • Wafer Mapping sensor
      • Wafer Align system (Option)
        - Substrate : Si, SiC, Glass, Quarts, Ceramic

    • LOAD-LOCK & DEGAS A.B Chamber

      [Description]

      • Micro Load-lock chamber
      • High-vacuum
      • Fast pumping & vent
      • Wafer cool stage
      • Lamp type Degas module
        - Power control system

    • TRANSFER Chamber

      [Description]

      • TM A Chamber 9 angle & vacuum robot
      • TM B Chamber 8 angle & vacuum robot
      • Slit Isolation valve
      • Ultra High-vacuum
      • Wafer detect sensor & AWC

    • PRE-CLEAN Chamber

      [Description]

      • Top ICP source
      • Bottom RF Bias chuck
        - Low temp chuck & ESC chuck (Option)
      • Wafer lift module
      • RF Power 13.56 MHz, LF Power 2 MHz
      • High-vacuum

    • PASS Chamber

      [Description]

      • 2 Pass-thru stage
      • Wafer sliding sensor
      • Transfer the wafer from Transfer chamber A to B

    • PVD Chamber

      [Description]

      • PVD Source Assembly (Magnet rotation)
      • DC Power capability for magnet source
      • High temp heater or Cool plate chuck
      • Lift Module Assembly (Adjustable T-S distance)
      • Bake-out lamp heater
      • Ultra High-vacuum

    • COOL A.B Chamber

      [Description]

      • Wafer cool plate
      • Ar gas cooling
        - Wafer cooling with cooling pedestal and process gas
      • Wafer sliding sensor
        - Wafer sliding protection on a pedestal

    • PEC Chamber [Option]

      [Description]

      • 4 Slot PEC Cassette
      • Lift module Assembly
      • 4 PEC Disk

  • NxT-300S Sputtering System

    • Application : Semi. Packaging, Power Device, Micro OLED, etc.
    • Platform : Single Cluster
    • Process Material : Metal, Oxide, Nitride
    • Power : RF, DC, RF+DC, HiPIMS
    • Gas : Ar, N₂, O₂
    • Vacuum : 5x10-8 Torr
    • Suscepter : Heat & Cool
    • Substrate : 12” Wafer
    • Uniformity : ≤3%
    More +

    • EFEM

      [Description]

      • 3 FOUP Automation EFEM
      • ATM Robot
      • Wafer Mapping sensor
      • Wafer Align system (Option)
        - Substrate Si, SiC, Glass, Quarts, Ceramic

    • LOAD-LOCK & DEGAS A.B Chamber

      [Description]

      • Micro Load-lock chamber
      • High-vacuum
      • Fast pumping & vent
      • Wafer cool stage
      • Lamp type Degas module
        - Power control system

    • TRANSFER Chamber

      [Description]

      • TM Chamber 8 angle & vacuum robot
      • Slit Isolation valve
      • Ultra High-vacuum
      • Wafer detect sensor & AWC

    • PRE-CLEAN Chamber

      [Description]

      • Top ICP source
      • Bottom RF Bias chuck - Low temp chuck & ESC chuck (Option)
      • Wafer lift module
      • RF Power 13.56 MHz, LF Power 2 MHz
      • High-vacuum

    • PVD Chamber

      [Description]

      • PVD Source Assembly (Magnet rotation)
      • DC Power capability for magnet source
      • High temp heater or Cool plate chuck
      • Lift Module Assembly (Adjustable T-S distance)
      • Bake-out lamp heater
      • Ultra High-vacuum

    • PEC Chamber [Option]

      [Description]

      • 4 Slot PEC Cassette
      • Lift module Assembly
      • 4 PEC Disk

  • NxT-200 Sputtering System

    • Application : Semi. Packaging, Power Device, Micro OLED, etc.
    • Platform : Dual Cluster
    • Process Material : Metal, TCO, Oxide
    • Power : DC / RF / RF+DC / HiPIMS
    • GAS : Ar, N₂, O₂
    • Vacuum : 5x10-8Torr
    • Suscepter : Heat & Cool
    • Substrate : 4” – 8” Wafer
    • Uniformity : ≤3%
    More +

    • LOAD-LOCK A.B Chamber

      [Description]

      • 25 slots wafer cassette
      • Auto wafer mapping system
      • Automatic door open & close system
      • Vacuum cassette elevator
      • Auto vacuum & vent system

    • TRANSFER Chamber

      [Description]

      • TM A Chamber 9 angle & vacuum robot
      • TM B Chamber 8 angle & vacuum robot
      • Slit Isolation valve
      • Ultra High-vacuum
      • Wafer detect sensor & AWC

    • ALIGN & DEGAS Chamber

      [Description]

      • Degas lamp module
        - lamp heater < 200℃ Power control
      • Wafer Align system
      • Substrate Si, SiC, Glass, Quarts, Ceramic

    • PRE-CLEAN Chamber

      [Description]

      • Top Magnet source & ICP Antena source
      • Bottom RF Bias chuck
        - Low temp chuck & ESC chuck (Option)
      • Wafer lift module
      • RF Power 13.56 MHz, LF Power 400 kHz
      • High-vacuum

    • PASS Chamber

      [Description]

      • 2 Pass-thru stage
      • Wafer sliding sensor
      • Transfer the wafer from Transfer chamber A to B

    • PVD Chamber

      [Description]

      • PVD Source Assembly (Magnet rotation)
      • DC Power capability for magnet source
      • High temp heater or Cool plate chuck
      • Lift Module Assembly (Adjustable T-S distance)
      • Bake-out lamp heater
      • Ultra High-vacuum

    • COOL A.B Chamber

      [Description]

      • Wafer cool plate
      • Ar gas cooling
        - Wafer cooling with cooling pedestal and process gas
      • Wafer sliding sensor
        - Wafer sliding protection on a pedestal

    • PEC Chamber [Option]

      [Description]

      • 4 Slot PEC Cassette
      • Lift module Assembly
      • 4 PEC Disk

  • NxT-200S Sputtering System

    • Application : Semi. Packaging, Power Device, Micro OLED, etc.
    • Platform : Single Cluster
    • Process Material : Metal, TCO, Oxide
    • Power : DC / RF / RF+DC / HiPIMS
    • GAS : Ar, N₂, O₂
    • Vacuum : 5x10-8Torr
    • Suscepter : Heat & Cool
    • Substrate : 4” – 8” Wafer
    • Uniformity : ≤3%
    More +

    • LOAD-LOCK A.B Chamber

      [Description]

      • 25 slots wafer cassette
      • Auto wafer mapping system
      • Automatic door open & close system
      • Vacuum cassette elevator
      • Auto vacuum & vent system
      • High-vacuum

    • TRANSFER Chamber

      [Description]

      • TM Chamber 9 angle & vacuum robot
      • Slit Isolation valve
      • Ultra High-vacuum
      • Wafer detect sensor & AWC

    • ALIGN & DEGAS Chamber

      [Description]

      • Degas lamp module
        - lamp heater < 200℃ Power control
      • Wafer Align system
      • Substrate Si, SiC, Glass, Quarts, Ceramic

    • PRE-CLEAN Chamber

      [Description]

      • Top Magnet source & ICP Antena source
      • Bottom RF Bias chuck
        - Low temp chuck & ESC chuck (Option)
      • Wafer lift module
      • RF Power 13.56 MHz, LF Power 400 kHz
      • High-vacuum

    • PVD Chamber

      [Description]

      • PVD Source Assembly (Magnet rotation)
      • DC Power capability for magnet source
      • High temp heater or Cool plate chuck
      • Lift Module Assembly (Adjustable T-S distance)
      • Bake-out lamp heater
      • Ultra High-vacuum

    • COOL Chamber

      [Description]

      • Wafer cool plate
      • Ar gas cooling
        - Wafer cooling with cooling pedestal and process gas
      • Wafer sliding sensor
        - Wafer sliding protection on a pedestal

    • PEC Chamber [Option]

      [Description]

      • 4 Slot PEC Cassette
      • Lift module Assembly
      • 4 PEC Disk
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